Radiation effects in oxynitrides grown in N{sub 2}O

Conference · Tue Mar 01 00:00:00 EST 1994

OSTI ID:10127876

Saks, N S ^[1]; Simons, M ^[2]; Fleetwood, D M ^[3]; Yount, J T; Lenahan, P M ^[4]

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1. Naval Research Lab., Washington, DC (United States)
2. Research Triangle Inst., Research Triangle Park, NC (United States)
3. Sandia National Labs., Albuquerque, NM (United States)
4. Pennsylvania State Univ., University Park, PA (United States)

We characterize the effects of ionizing radiation on oxynitrides furnace-grown in N{sub 2}O. Results are presented on hole trapping, interface trap creation, time-dependent hole annealing, and hole de-trapping using thermally-stimulated current analysis.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10127876
• Report Number(s): SAND-94-0447C; CONF-940726-4; ON: DE94007298; BR: GB0103012
• Resource Relation: Conference: 31. annual international nuclear and space radiation effects conference,Tucson, AZ (United States),18-22 Jul 1994; Other Information: PBD: [1994]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
NITROGEN OXIDES
PHYSICAL RADIATION EFFECTS
IONIZING RADIATIONS
IRRADIATION
NITROUS OXIDE
MOS TRANSISTORS
HOLES
TRAPS
426000
360605
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
RADIATION EFFECTS