Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates
- Plainfield, IL
- Downers Grove, IL
- Bolingbrook, IL
- Woodridge, IL
A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500.degree. C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10.sup.10sites/cm.sup.2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500.degree. C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500.degree. C.-4 hours or less onto a variety of substrates such as MEMS devices.
- Research Organization:
- University of Chicago, Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-31-109-ENG-38
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Number(s):
- 7,556,982
- Application Number:
- 10/892,736
- OSTI ID:
- 1012638
- Country of Publication:
- United States
- Language:
- English
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