Femtosecond probe-probe transmission studies of LT-grown GaAs near the band edge

Conference · Wed Dec 01 00:00:00 EST 1993

OSTI ID:10124551

Radousky, H B; Bello, A F; Erskine, D J; Dinh, L N; Bennahmias, M J; Perry, M D; Ditmire, T R; Mariella, Jr, R P

We have studied the near-edge optical response of a LT-grown GaAs sample which was deposited at 300{degrees}C on a Si substrate, and then annealed at 600{degrees}C. The Si was etched away to leave a 1 micron free standing GaAs film. Femtosecond transmission measurements were made using an equal pulse technique at four wavelengths between 825 and 870 nm. For each wavelength we observe both a multipicosecond relaxation time, as well as a shorter relaxation time which is less than 100 femtoseconds.

• Research Organization: Lawrence Livermore National Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 10124551
• Report Number(s): UCRL-JC-115625; CONF-940411-1; ON: DE94006660
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS),San Francisco, CA (United States),4-8 Apr 1994; Other Information: PBD: Dec 1993
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CRYSTAL GROWTH METHODS
PHOTOLUMINESCENCE
LIGHT TRANSMISSION
THIN FILMS
SILICON
SUBSTRATES
LASER RADIATION
PULSE TECHNIQUES
665000
360601
PHYSICS OF CONDENSED MATTER
PREPARATION AND MANUFACTURE