ECR plasma-assisted deposition of Al{sub 2}O{sub 3} and dispersion-strengthened AlO{sub 2}

Conference · Wed Mar 01 00:00:00 EST 1995

OSTI ID:10123197

Barbour, J C; Follstaedt, D M; Myers, S M

Electron cyclotron resonance (ECR) O{sub 2} plasmas, in conjunction with electron-beam evaporation of Al, were used to grow thick AlO{sub x} films were varying but controlled composition and microstructure. The ion energy was varied from 30 to 190 eV, and growth temperatures varied from 35{degrees}C to 400{degrees}C. The ECR-film compositions were varied from AlO{sub 0.1} to Al{sub 2}O{sub 3} by controlling the plasma parameters and Al deposition rate. The Al-rich alloys exhibited a fine-grain (10-100 nm) fcc Al microstructure with {gamma}-Al{sub 2}O{sub 3} precipitates ({approximately}1 nm), similar to that found in the gigapascal-strength O-implanted Al. The measured hardness of the ECR Al-O alloys ({approximately}3 GPa) was also similar to the ion-implanted alloys which implies that the yield strength of the ECR material is {approximately}1 GPa. Moreover, the Al-O alloys retain much of the elasticity of the Al metal matrix. As-deposited stoichiometric Al{sub 2}O{sub 3} samples grown with an applied bias of -140 to -160 V at 400{degrees}C were fine-grain polycrystalline {gamma}-Al{sub 2}O{sub 3}. The amorphous films crystallized into the {gamma}-Al{sub 2}O{sub 3} phase upon vacuum annealing to 800{degrees}C.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10123197
• Report Number(s): SAND-94-2417C; CONF-950220-3; ON: DE95007743; TRN: 95:002633
• Resource Relation: Conference: 9. international conference on ion beam modification of materials,Canberra (Australia),5-10 Feb 1995; Other Information: PBD: [1995]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
MICROSTRUCTURE
ENERGY BEAM DEPOSITION
PHYSICAL PROPERTIES
DIELECTRIC MATERIALS
ENERGY BEAM DEPOSITION FILMS
ELECTRON CYCLOTRON-RESONANCE
YIELD STRENGTH
HARDNESS
ELASTICITY
GRAIN ORIENTATION
GRAIN SIZE
LANGMUIR PROBE
ION IMPLANTATION
360201
360202
360203
665300
PREPARATION AND FABRICATION
STRUCTURE AND PHASE STUDIES
MECHANICAL PROPERTIES
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER