Ion beam synthesis of IrSi{sub 3} by 1-MeV Ir ion implantation into Si(111)

Conference · Mon Nov 01 00:00:00 EST 1993

OSTI ID:10122582

Sjoreen, T P ^[1]; Hinneberg, H J ^[2]

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1. Oak Ridge National Lab., TN (United States)
2. Forschungszentrum Juelich GmbH (Germany)

The formation of a Si/IrSi{sub 3}/Si heterostructure by 1-MeV Ir ion implantation and subsequent annealing has been studied for different doses (0.1--2.25 {times} 10{sup 17} Ir/cm{sup 2}), substrate temperatures (450--600C) and annealing temperatures (1000--1200C) using Rutherford backscattering spectrometry, ion channeling and cross-sectional transmission electron microscopy. The heterostructure formation is observed to depend strongly on the processing conditions. The best structure, nearly continuous and precipitate-free, is obtained by implanting 1.8--2.0 {times} 10{sup 17} Ir/cm{sup 2} at a substrate temperature of 550C and annealing at 1100C for 5 h. A stoichiometric IrSi{sub 3} layer can also be produced by furnace annealing at 1150C for 1 h or by rapid-thermal-annealing at 1200C for 3 min. Other substrate temperatures generally lead to a structure with a discontinuous IrSi{sub 3} layer frequently interrupted by large surface precipitates or islands. Origin of these islands, as well as dependence of heterostructure on processing parameters, is discussed.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 10122582
• Report Number(s): CONF-931108-76; ON: DE94006556
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: Nov 1993
• Country of Publication: United States
• Language: English

Related Subjects

07 ISOTOPES AND RADIATION SOURCES
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
SILICON
ION IMPLANTATION
IRIDIUM SILICIDES
SYNTHESIS
HETEROJUNCTIONS
IRIDIUM IONS
ANNEALING
070205
665300
360201
INDUSTRIAL APPLICATIONS
RADIATION PROCESSING
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
PREPARATION AND FABRICATION