Evidence for a correct SiO{sub 2} voltage acceleration model
Abstract
We present experimental evidence that SiO{sub 2} breakdown is best described by the E-model of Baglee and McPherson as opposed to the 1/E model of Lee, Chen and Hu. The experiment was performed on 1765 fully processed capacitors over a range of electric fields of 7.25 MV/cm to 11 MV/cm and temperatures of 25C to 200C. In addition, we also present a curious data point at low electric fields that we ascribe to a change in breakdown mechanism.
- Authors:
-
- Sandia National Labs., Albuquerque, NM (United States)
- National Semiconductor Corp., West Jordan, UT (United States)
- National Semiconductor Corp., Santa Clara, CA (United States)
- Publication Date:
- Research Org.:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 10122461
- Report Number(s):
- SAND-93-1830C; CONF-9310147-2
ON: DE94006578; BR: GB0103012
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: 1993 international integrated reliability workshop,Lake Tahoe, CA (United States),24-27 Oct 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SILICON OXIDES; BREAKDOWN; ELECTRIC DISCHARGES; MATHEMATICAL MODELS; TESTING; 360204; 665000; PHYSICAL PROPERTIES; PHYSICS OF CONDENSED MATTER
Citation Formats
Miller, W M, Smith, N F, Messick, C, and Shideler, J A. Evidence for a correct SiO{sub 2} voltage acceleration model. United States: N. p., 1993.
Web.
Miller, W M, Smith, N F, Messick, C, & Shideler, J A. Evidence for a correct SiO{sub 2} voltage acceleration model. United States.
Miller, W M, Smith, N F, Messick, C, and Shideler, J A. 1993.
"Evidence for a correct SiO{sub 2} voltage acceleration model". United States. https://www.osti.gov/servlets/purl/10122461.
@article{osti_10122461,
title = {Evidence for a correct SiO{sub 2} voltage acceleration model},
author = {Miller, W M and Smith, N F and Messick, C and Shideler, J A},
abstractNote = {We present experimental evidence that SiO{sub 2} breakdown is best described by the E-model of Baglee and McPherson as opposed to the 1/E model of Lee, Chen and Hu. The experiment was performed on 1765 fully processed capacitors over a range of electric fields of 7.25 MV/cm to 11 MV/cm and temperatures of 25C to 200C. In addition, we also present a curious data point at low electric fields that we ascribe to a change in breakdown mechanism.},
doi = {},
url = {https://www.osti.gov/biblio/10122461},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Dec 31 00:00:00 EST 1993},
month = {Fri Dec 31 00:00:00 EST 1993}
}
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