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Title: Evidence for a correct SiO{sub 2} voltage acceleration model

Abstract

We present experimental evidence that SiO{sub 2} breakdown is best described by the E-model of Baglee and McPherson as opposed to the 1/E model of Lee, Chen and Hu. The experiment was performed on 1765 fully processed capacitors over a range of electric fields of 7.25 MV/cm to 11 MV/cm and temperatures of 25C to 200C. In addition, we also present a curious data point at low electric fields that we ascribe to a change in breakdown mechanism.

Authors:
;  [1];  [2];  [3]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. National Semiconductor Corp., West Jordan, UT (United States)
  3. National Semiconductor Corp., Santa Clara, CA (United States)
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
10122461
Report Number(s):
SAND-93-1830C; CONF-9310147-2
ON: DE94006578; BR: GB0103012
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 1993 international integrated reliability workshop,Lake Tahoe, CA (United States),24-27 Oct 1993; Other Information: PBD: [1993]
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SILICON OXIDES; BREAKDOWN; ELECTRIC DISCHARGES; MATHEMATICAL MODELS; TESTING; 360204; 665000; PHYSICAL PROPERTIES; PHYSICS OF CONDENSED MATTER

Citation Formats

Miller, W M, Smith, N F, Messick, C, and Shideler, J A. Evidence for a correct SiO{sub 2} voltage acceleration model. United States: N. p., 1993. Web.
Miller, W M, Smith, N F, Messick, C, & Shideler, J A. Evidence for a correct SiO{sub 2} voltage acceleration model. United States.
Miller, W M, Smith, N F, Messick, C, and Shideler, J A. 1993. "Evidence for a correct SiO{sub 2} voltage acceleration model". United States. https://www.osti.gov/servlets/purl/10122461.
@article{osti_10122461,
title = {Evidence for a correct SiO{sub 2} voltage acceleration model},
author = {Miller, W M and Smith, N F and Messick, C and Shideler, J A},
abstractNote = {We present experimental evidence that SiO{sub 2} breakdown is best described by the E-model of Baglee and McPherson as opposed to the 1/E model of Lee, Chen and Hu. The experiment was performed on 1765 fully processed capacitors over a range of electric fields of 7.25 MV/cm to 11 MV/cm and temperatures of 25C to 200C. In addition, we also present a curious data point at low electric fields that we ascribe to a change in breakdown mechanism.},
doi = {},
url = {https://www.osti.gov/biblio/10122461}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Dec 31 00:00:00 EST 1993},
month = {Fri Dec 31 00:00:00 EST 1993}
}

Conference:
Other availability
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