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Title: High-efficiency cadmium and zinc-telluride-based thin-film solar cells. Annual subcontract report, 1 March 1990--28 February 1991

Technical Report ·
DOI:https://doi.org/10.2172/10121767· OSTI ID:10121767
; ;  [1]
  1. Georgia Inst. of Tech., Atlanta, GA (United States)

This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States); Georgia Inst. of Tech., Atlanta, GA (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
10121767
Report Number(s):
NREL/TP-214-4580; ON: DE92001198
Resource Relation:
Other Information: PBD: Feb 1992
Country of Publication:
United States
Language:
English