Semiconductor microcavity lasers

Conference · Tue Feb 01 00:00:00 EST 1994

OSTI ID:10121204

Gourley, P L; Wendt, J R; Vawter, G A; Warren, M E; Brennan, T M; Hammons, B E

New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10121204
• Report Number(s): SAND-94-0147C; CONF-940114-2; ON: DE94006143; BR: GB0103012; TRN: AHC29404%%54
• Resource Relation: Conference: International symposium on optoelectronic and microwave engineering,Los Angeles, CA (United States),22-28 Jan 1994; Other Information: PBD: [1994]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
FABRICATION
LASER CAVITIES
MICROSTRUCTURE
TECHNOLOGY ASSESSMENT
TEMPERATURE DEPENDENCE
HETEROJUNCTIONS
426002
LASERS AND MASERS