Ion beam-assisted deposition of boron nitride from a condensed layer of diborane and ammonia at 78 K

Conference · Fri Dec 31 00:00:00 EST 1993

OSTI ID:10119184

Kroczynski, R J; Strongin, D R ^[1]; Ruckman, M W; Strongin, M ^[2]

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1. State Univ. of New York, Stony Brook, NY (United States). Dept. of Chemistry
2. Brookhaven National Lab., Upton, NY (United States)

This paper examines the ion beam-assisted deposition (IBAD) of thin boron nitride films using cryogenically condensed precursors. Low energy (1100 eV) argon ad (2000 eV) deuterated ammonia beams with currents of 600--850 nA were used to mix and initiate reactions in frozen (90 K) layers of diborane (B{sub 2}H{sub 6} and ammonia (NH{sub 3}) or only B{sub 2}H{sub 6}, respectively. The resulting film is shown to be an amorphous BN coating approximately 30 {Angstrom} thick.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 10119184
• Report Number(s): BNL-49904; CONF-931108-46; ON: DE94006058; CNN: Grant DMR 9258544; TRN: 94:002359
• Resource Relation: Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: [1993]
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
BORON NITRIDES
ENERGY BEAM DEPOSITION
ION BEAMS
THIN FILMS
PHOTOELECTRON SPECTROSCOPY
BINDING ENERGY
X-RAY SPECTRA
665300
360601
INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
PREPARATION AND MANUFACTURE