Dislocation loops in spinel crystals irradiated successively with deep and shallow ion implants
- Los Alamos National Lab., NM (United States)
- New Mexico Univ., Albuquerque, NM (United States)
This study examines the influence of microstructural defects on irradiation damage accumulation in the oxide spinel. Single crystals of the compound MgAl{sub 2}O{sub 4} with surface normal [111] were irradiated under cryogenic temperature (100K) either with 50 keV Ne ions (fluence 5.0 {times} 10{sup 12}/cm{sup 2}), 400 keV Ne ions (fluence 6.7 {times} 10{sup 13}/cm{sup 2}) or successively with 400 keV Ne ions followed by 50 keV Ne ions. The projected range of 50 keV Ne ions in spinel is {approximately}50 mn (``shallow``) while the projected range of 400 keV Ne ions is {approximately}500 mn (``deep``). Transmission electron microscopy (TEM) was used to examine dislocation loops/defect clusters formed by the implantation process. Measurements of the dislocation loop size were made using weak-beam imaging technique on cross-sectional TEM ion-implanted specimens. Defect clusters were observed in both deep and shallow implanted specimens, while dislocation loops were observed in the shallow implanted sample that was previously irradiated by 400 keV Ne ions. Cluster size was seen to increase for shallow implants in crystals irradiated with a deep implant (size {approximately}8.5 nm) as compared to crystals treated only to a shallow implant (size {approximately}3.1 nm).
- Research Organization:
- Los Alamos National Lab., NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 10113939
- Report Number(s):
- LA-UR-93-4464; CONF-931108-34; ON: DE94005083; TRN: 94:002238
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of Low Temperature Ion Irradiation on the Microstructure of Nitride Ceramics
Ion-beam induced disordering and onset of amorphization in spinel by defect accumulation