Creep behavior of MoSi{sub 2}-SiC composites
Using a cylindrical indenter, indentation creep behavior of hot pressed and HIPed MoSi{sub 2}-SiC composites containing 0--40% SiC by volume, was characterized at 1000--1200C, 258--362 MPa. Addition of SiC affects the creep behavior of MoSi{sub 2} in a complex manner by pinning grain boundaries during pressing, thus leading to smaller MoSi{sub 2} grains; by obstructing or altering both dislocation motion and grain boundary sliding; and by increasing the overall yield stress of the material. Comparisons are made between indentation and compressive creep studies. It is shown that under certain conditions, compressive creep and indentation creep measurements yield comparable results after correcting for effective stresses and strain rates beneath the indenter.
- Research Organization:
- Los Alamos National Lab., NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 10113217
- Report Number(s):
- LA-UR-93-4288; CONF-931108-30; ON: DE94004980
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
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