Electric-field dependence of electroreflectance and photocurrent spectra at visible wavelengths in MOVPE-grown InAlGaP multiple strained quantum-well structures
The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for visible-wavelength optical modulator applications.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10111399
- Report Number(s):
- SAND-93-1529C; CONF-931108-20; ON: DE94004692; TRN: 94:000196
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
HETEROJUNCTIONS
VAPOR PHASE EPITAXY
ELECTRO-OPTICAL EFFECTS
SPECTRA
INDIUM PHOSPHIDES
GALLIUM PHOSPHIDES
ALUMINIUM PHOSPHIDES
GALLIUM ARSENIDES
DOPED MATERIALS
OPTICAL PROPERTIES
VISIBLE RADIATION
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
STARK EFFECT
DIFFUSION
360606
360601
PHYSICAL PROPERTIES
PREPARATION AND MANUFACTURE