Control of texture during vapor deposition of Al on (111) Si

Conference · Mon Apr 01 00:00:00 EST 1991

OSTI ID:10107760

Thangaraj, N; Westmacott, K H; Dahmen, U ^[1]; Reyes-Gasga, J ^[2]

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1. Lawrence Berkeley Lab., CA (United States)
2. Universidad Nacional Autonoma de Mexico, Mexico City (Mexico). Inst. de Fisica

The growth of Al on (111) Si single crystal substrates by various techniques usually leads to films with (111) texture, sometimes with a small (100) component. Using X-ray diffraction and electron microscopy, the present study shows that the (100) texture component can be enhanced to the point of forming an oriented (100) continuous tricrystal structure. The formation of this texture is shown to be related the presence of Cu. It is concluded that an understanding of heteroepitaxy must take into account the effect of chemistry in addition to the crystallographic criteria of lattice matching.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 10107760
• Report Number(s): LBL-30729; CONF-910406-39; ON: DE92004168
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS),Anaheim, CA (United States),29 Apr - 3 May 1991; Other Information: PBD: Apr 1991
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
DEPOSITION
COATINGS
TEXTURE
SILICON
X-RAY DIFFRACTION
ELECTRON MICROSCOPY
CRYSTALS
GRAIN BOUNDARIES
COPPER
360101
360102
PREPARATION AND FABRICATION
STRUCTURE AND PHASE STUDIES