Effects of oxide charge and surface recombination velocity on the excess base current of BJTs
Abstract
The role of net positive oxide trapped charge and surface recombination velocity on excess base current in BJTs is identified. The effects of the two types of damage can be detected by plotting the excess base current versus base-emitter voltage. Differences and similarities between ionizing-radiation-induced and hot electron-induced degradation are discussed.
- Authors:
-
- Univ. of Arizona, Tucson, AZ (United States)
- Analog Devices, Inc., Woburn, MA (United States)
- Sandia National Labs., Albuquerque, NM (United States)
- NSWC-Crane, IN (United States)
- Publication Date:
- Research Org.:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States); Defense Nuclear Agency, Washington, DC (United States)
- OSTI Identifier:
- 10106939
- Report Number(s):
- SAND-93-1870C; CONF-9310238-1
ON: DE94003711; TRN: 94:000156
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Institute of Electrical and Electronics Engineers (IEEE) bipolar/BiCMOS circuits and technology meeting,Minneapolis, MN (United States),4-5 Oct 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 36 MATERIALS SCIENCE; TRANSISTORS; SURFACE IONIZATION; FABRICATION; DOPED MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; ELECTRONIC CIRCUITS; GAIN; LEAKAGE CURRENT; 426000; 360606; COMPONENTS, ELECTRON DEVICES AND CIRCUITS
Citation Formats
Kosier, S L, Schrimpf, R D, Wei, A, DeLaus, M, Fleetwood, D M, and Combs, W E. Effects of oxide charge and surface recombination velocity on the excess base current of BJTs. United States: N. p., 1993.
Web.
Kosier, S L, Schrimpf, R D, Wei, A, DeLaus, M, Fleetwood, D M, & Combs, W E. Effects of oxide charge and surface recombination velocity on the excess base current of BJTs. United States.
Kosier, S L, Schrimpf, R D, Wei, A, DeLaus, M, Fleetwood, D M, and Combs, W E. 1993.
"Effects of oxide charge and surface recombination velocity on the excess base current of BJTs". United States. https://www.osti.gov/servlets/purl/10106939.
@article{osti_10106939,
title = {Effects of oxide charge and surface recombination velocity on the excess base current of BJTs},
author = {Kosier, S L and Schrimpf, R D and Wei, A and DeLaus, M and Fleetwood, D M and Combs, W E},
abstractNote = {The role of net positive oxide trapped charge and surface recombination velocity on excess base current in BJTs is identified. The effects of the two types of damage can be detected by plotting the excess base current versus base-emitter voltage. Differences and similarities between ionizing-radiation-induced and hot electron-induced degradation are discussed.},
doi = {},
url = {https://www.osti.gov/biblio/10106939},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Dec 01 00:00:00 EST 1993},
month = {Wed Dec 01 00:00:00 EST 1993}
}
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