Effects of oxide charge and surface recombination velocity on the excess base current of BJTs

Conference · Wed Dec 01 00:00:00 EST 1993

OSTI ID:10106939

Kosier, S L; Schrimpf, R D; Wei, A ^[1]; DeLaus, M ^[2]; Fleetwood, D M ^[3]; Combs, W E ^[4]

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1. Univ. of Arizona, Tucson, AZ (United States)
2. Analog Devices, Inc., Woburn, MA (United States)
3. Sandia National Labs., Albuquerque, NM (United States)
4. NSWC-Crane, IN (United States)

The role of net positive oxide trapped charge and surface recombination velocity on excess base current in BJTs is identified. The effects of the two types of damage can be detected by plotting the excess base current versus base-emitter voltage. Differences and similarities between ionizing-radiation-induced and hot electron-induced degradation are discussed.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Defense Nuclear Agency, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10106939
• Report Number(s): SAND-93-1870C; CONF-9310238-1; ON: DE94003711; TRN: 94:000156
• Resource Relation: Conference: Institute of Electrical and Electronics Engineers (IEEE) bipolar/BiCMOS circuits and technology meeting,Minneapolis, MN (United States),4-5 Oct 1993; Other Information: PBD: [1993]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
TRANSISTORS
SURFACE IONIZATION
FABRICATION
DOPED MATERIALS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
ELECTRONIC CIRCUITS
GAIN
LEAKAGE CURRENT
426000
360606
COMPONENTS
ELECTRON DEVICES AND CIRCUITS