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Title: Effects of oxide charge and surface recombination velocity on the excess base current of BJTs

Abstract

The role of net positive oxide trapped charge and surface recombination velocity on excess base current in BJTs is identified. The effects of the two types of damage can be detected by plotting the excess base current versus base-emitter voltage. Differences and similarities between ionizing-radiation-induced and hot electron-induced degradation are discussed.

Authors:
; ;  [1];  [2];  [3];  [4]
  1. Univ. of Arizona, Tucson, AZ (United States)
  2. Analog Devices, Inc., Woburn, MA (United States)
  3. Sandia National Labs., Albuquerque, NM (United States)
  4. NSWC-Crane, IN (United States)
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States); Defense Nuclear Agency, Washington, DC (United States)
OSTI Identifier:
10106939
Report Number(s):
SAND-93-1870C; CONF-9310238-1
ON: DE94003711; TRN: 94:000156
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Institute of Electrical and Electronics Engineers (IEEE) bipolar/BiCMOS circuits and technology meeting,Minneapolis, MN (United States),4-5 Oct 1993; Other Information: PBD: [1993]
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; TRANSISTORS; SURFACE IONIZATION; FABRICATION; DOPED MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; ELECTRONIC CIRCUITS; GAIN; LEAKAGE CURRENT; 426000; 360606; COMPONENTS, ELECTRON DEVICES AND CIRCUITS

Citation Formats

Kosier, S L, Schrimpf, R D, Wei, A, DeLaus, M, Fleetwood, D M, and Combs, W E. Effects of oxide charge and surface recombination velocity on the excess base current of BJTs. United States: N. p., 1993. Web.
Kosier, S L, Schrimpf, R D, Wei, A, DeLaus, M, Fleetwood, D M, & Combs, W E. Effects of oxide charge and surface recombination velocity on the excess base current of BJTs. United States.
Kosier, S L, Schrimpf, R D, Wei, A, DeLaus, M, Fleetwood, D M, and Combs, W E. 1993. "Effects of oxide charge and surface recombination velocity on the excess base current of BJTs". United States. https://www.osti.gov/servlets/purl/10106939.
@article{osti_10106939,
title = {Effects of oxide charge and surface recombination velocity on the excess base current of BJTs},
author = {Kosier, S L and Schrimpf, R D and Wei, A and DeLaus, M and Fleetwood, D M and Combs, W E},
abstractNote = {The role of net positive oxide trapped charge and surface recombination velocity on excess base current in BJTs is identified. The effects of the two types of damage can be detected by plotting the excess base current versus base-emitter voltage. Differences and similarities between ionizing-radiation-induced and hot electron-induced degradation are discussed.},
doi = {},
url = {https://www.osti.gov/biblio/10106939}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Dec 01 00:00:00 EST 1993},
month = {Wed Dec 01 00:00:00 EST 1993}
}

Conference:
Other availability
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