Application of quaternary phase diagrams to compound semiconductor processing. Progress report, April 1, 1988--December 31, 1988
This paper considers the application of quaternary phase diagrams to understanding and predicting the behavior of II-VI thin film interfaces in photovoltaic devices under annealing conditions. Examples, listed in a table, include semiconductor/insulator/semiconductor (SIS) layered structures, II-VI/II-VI and III-V/II-VI epitaxial heterojunctions and oxidation of ternary compounds. Solid solubility is taken into account for quaternary phase diagrams of semiconductor systems. Using free energies of formation, a method to calculate the quaternary phase diagrams was developed. The Ga-As-II-VI and Cd-Te-Zn-O phase diagrams are reviewed as examples of quaternary phase diagrams without and with solid solubility.
- Research Organization:
- Carnegie-Mellon Univ., Pittsburgh, PA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG02-87ER45329
- OSTI ID:
- 10106762
- Report Number(s):
- DOE/ER/45329-T1; ON: DE94003858; BR: KC0201010
- Resource Relation:
- Other Information: PBD: [1988]
- Country of Publication:
- United States
- Language:
- English
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Application of quaternary phase diagrams to compound semiconductor processing: Progress report, April 1--December 31, 1988
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