Hydrogen uptake into silicon from an ECR plasma

Conference · Wed Dec 01 00:00:00 EST 1993

OSTI ID:10106735

Wampler, W R; Barbour, J C

The concentration of hydrogen in solution near the surface of silicon exposed to an electron cyclotron resonance (ECR) plasma was determined by measuring the flux of hydrogen permeating to subsurface microcavities. The energy and flux of hydrogen impinging onto the surface from the plasma was also measured. A model is described which predicts the concentration of hydrogen in solution from the energy and flux of the impinging hydrogen. The measured solution concentrations were {approximately}10{sup {minus}9} H/Si at 600{degrees}C and {approximately}10{sup {minus}8} H/Si at 400{degrees}C, in fairly good agreement with the model. The absence of accumulation of immobile hydrogen near the surface indicates that lattice defects, which strongly trap hydrogen, were not produced by the ECR plasma. This study establishes a connection between the properties of the ECR plasma and the concentration of hydrogen in silicon samples exposed to the plasma, which allows improved control over passivation of defects and dopants.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10106735
• Report Number(s): SAND-93-1159C; CONF-9311104-14; ON: DE94003771; BR: GB0103012
• Resource Relation: Conference: 40. national symposium of the American Vacuum Society (AVS),Orlando, FL (United States),15-19 Nov 1993; Other Information: PBD: [1993]
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
42 ENGINEERING
HYDROGEN
CHEMISORPTION
SILICON
SURFACE PROPERTIES
PASSIVATION
SEMICONDUCTOR MATERIALS
QUANTITATIVE CHEMICAL ANALYSIS
DEUTERIUM
MATHEMATICAL MODELS
400201
426000
CHEMICAL AND PHYSICOCHEMICAL PROPERTIES
COMPONENTS
ELECTRON DEVICES AND CIRCUITS