Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters
Conference
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OSTI ID:10106644
- Australian National Univ., Canberra, CT (United States). Faculty of Engineering
- CNRS, Villeurbanne (France). Laboratoire de Physique de la Matiere
- Sandia National Labs., Albuquerque, NM (United States)
- Siemens Solar Industries, Camarillo, CA (United States)
An analytical procedure to extract the surface recombination velocity of the SiO{sub 2}/n type silicon interface, S{sub p}, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of S{sub p} are significantly affected by the assumed material parameters for highly doped silicon, t{sub p}, {mu}{sub p} and {Delta}E{sub g}{sup app}. Updated values for these parameters are used to obtain the dependence of S{sub p} on the phosphorus concentration, N{sub D}, using both previous and new experimental data. The new evidence supports the finding that S{sub p} increases strongly with N{sub D}.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10106644
- Report Number(s):
- SAND-94-1563C; CONF-941203-10; ON: DE95004539; TRN: 95:000817
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion,Waikoloa, HI (United States),5-9 Dec 1994; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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