Investigation of plasma etch induced damage in compound semiconductor devices

Conference · Mon Nov 01 00:00:00 EST 1993

OSTI ID:10105186

Shul, R J; Lovejoy, M L; Hetherington, D L; Rieger, D J; Vawter, G A; Klem, J F ^[1]; Melloch, M R ^[2]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Purdue Univ., Lafayette, IN (United States). School of Electrical Engineering

We have investigated the electrical performance of mesa-isolated GaAs pn-junction diodes to determine the plasma-induced damage effects from reactive ion and reactive ion beam etching. A variety of plasma chemistries (SiCl{sub 4}, BCl{sub 3}, BCl{sub 3}/Cl{sub 2}, and Cl{sub 2}) and ion energies ranging from 100 to 400 eV were studied. We have observed that many of the RIE BCl{sub 3}/Cl{sub 2} plasmas and RIBE Cl{sub 2} plasmas yield diodes with low reverse-bias currents that are comparable to the electrical characteristics of wet-chemical-etched devices. The reverse-bias leakage currents are independent of surface morphology and sidewall profiles.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10105186
• Report Number(s): SAND-93-1171C; CONF-9311104-10; ON: DE94002849; BR: GB0103012
• Resource Relation: Conference: 40. national symposium of the American Vacuum Society (AVS),Orlando, FL (United States),15-19 Nov 1993; Other Information: PBD: 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
GALLIUM ARSENIDES
ETCHING
SEMICONDUCTOR JUNCTIONS
SILICON CHLORIDES
BORON CHLORIDES
CHLORINE
360101
426000
PREPARATION AND FABRICATION
COMPONENTS
ELECTRON DEVICES AND CIRCUITS