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Title: Study of high {Tc} superconducting thin films grown by MOCVD. Final report, July 1, 1986--April 30, 1990

Technical Report ·
DOI:https://doi.org/10.2172/10104787· OSTI ID:10104787

Work is described briefly, which was carried out on development of techniques to grow metal-semiconductor superlattices (artificially layered materials) and on the copper oxide based susperconductors (naturally layered materials). The current growth technique utilized is metalorganic chemical vapor deposition (MOCVD). CdTe, PbTe, La, LaTe, and Bi{sub 2}Te{sub 3} were deposited, mostly on GaAs. Several YBa{sub 2}Cu{sub 3}O{sub 7} compounds were obtained with possible superconductivity at temperatures up to 550 K (1 part in 10{sup 4}). YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} and Tl{sub 2}CaBa{sub 2}Cu{sub 2}O{sub y} thin films were deposited by MOCVD on common substrates such as glass.

Research Organization:
Georgia Inst. of Tech., Atlanta, GA (United States). School of Physics
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
FG05-86ER45266
OSTI ID:
10104787
Report Number(s):
DOE/ER/45266-T3; ON: DE93005052; IN: G-41-629
Resource Relation:
Other Information: PBD: [1990]
Country of Publication:
United States
Language:
English