Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures
- Argonne National Lab., IL (United States)
- Ionwerks, Inc., Houston, TX (United States)
- Schmidt Instruments, Inc., Houston, TX (United States)
- Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science
Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 {Angstrom}), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 {Angstrom} of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films.
- Research Organization:
- Argonne National Lab., IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 10103762
- Report Number(s):
- ANL/CHM/CP-73956; CONF-9209264-1; ON: DE93003004
- Resource Relation:
- Conference: NATO Advanced Study Institute on multicomponent and multilayered thin films for advanced microtechnologies, techniques, fundamentals and devices,Bad Windsheim (Germany),22 Sep - 6 Oct 1992; Other Information: PBD: [1992]
- Country of Publication:
- United States
- Language:
- English
Similar Records
Science and technology of thin films and interfacial layers in ferroelectric and high-dielectric constant heterostructures and application to devices.
Studies of ferroelectric film growth and capacitor interface processes via in situ analytical techniques and correlation with electrical properties.
Related Subjects
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ION SCATTERING ANALYSIS
USES
REVIEWS
THIN FILMS
HIGH-TC SUPERCONDUCTORS
SUPERCONDUCTING FILMS
ION BEAMS
LAYERS
TIME-OF-FLIGHT METHOD
ARGON IONS
NEON IONS
HELIUM IONS
RECOILS
SPECTROSCOPY
MASS SPECTROSCOPY
400101
360202
665412
ACTIVATION, NUCLEAR REACTION, RADIOMETRIC, AND RADIOCHEMICAL PROCEDURES
STRUCTURE AND PHASE STUDIES
SUPERCONDUCTING DEVICES