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Title: High-Efficiency Non-Polar GaN-Based LEDs

Abstract

Inlustra Technologies with subcontractor U.C. Santa Barbara conducted a project with the principle goal of demonstrating high internal quantum efficiency blue (430 nm) and green (540nm) light emitting diodes (LEDs) on low-defect density non-polar GaN wafers. Inlustra pursued the fabrication of smooth thick a-plane and m-plane GaN films, as well as defect reduction techniques such as lateral epitaxial overgrowth (LEO) to uniformly lower dislocation density in these films. Limited free-standing wafers were produced as well. By the end of the reporting period, Inlustra had met its milestone of dislocation reduction to < 5 x 10{sup 6} cm{sup -2}. Stacking faults were still present in appreciable density ({approx} 1 x 10{sup 5} cm{sup -1}), but were not the primary focus of defect reduction since there have been no published studies establishing their detrimental effects on LED performance. Inlustra's LEO progress built a solid foundation upon which further commercial development of GaN substrates will occur. UCSB encountered multiple delays in its LED growth and fabrication efforts due to unavoidable facilities outages imposed by ongoing construction in an area adjacent to the metalorganic chemical vapor deposition (MOCVD) laboratory. This, combined with the large amount of ab initio optimization required for the MOCVD systemmore » used during the project, resulted in unsatisfactory LED progress. Although numerous blue-green photoluminescence results were obtained, only a few LED structures exhibited electroluminescence at appreciable levels. UCSB also conducting extensive modeling (led by Prof. Van de Walle) on the problem of non-radiative Auger recombination in GaN-based LED structures, which has been posited to contribute to LED efficiency 'droop' at elevated current density. Unlike previous modeling efforts, UCSB's approach was truly a first-principles ab initio methodology. Building on solid numerical foundations, the Auger recombination rates of In{sub x}Ga{sub 1-x}N alloys were calculated from first-principles density-functional and many-body-perturbation theory. The differing mechanisms of inter- and intra-band recombination were found to affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient was calculated to be as large as 2 x 10{sup -30} cm{sup 6} s{sup -1}; in the infrared it is even larger. These results indicated that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters, whether on non-polar or polar crystal planes.« less

Authors:
Publication Date:
Research Org.:
Inlustra Technologies,Llc
Sponsoring Org.:
USDOE
OSTI Identifier:
1001208
DOE Contract Number:  
FC26-07NT43228
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; CHEMICAL VAPOR DEPOSITION; CONSTRUCTION; CURRENT DENSITY; DEFECTS; DISLOCATIONS; EFFICIENCY; ELECTROLUMINESCENCE; FABRICATION; LIGHT EMITTING DIODES; OPTIMIZATION; PERFORMANCE; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; RECOMBINATION; STACKING FAULTS; SUBSTRATES

Citation Formats

Fini, Paul. High-Efficiency Non-Polar GaN-Based LEDs. United States: N. p., 2010. Web. doi:10.2172/1001208.
Fini, Paul. High-Efficiency Non-Polar GaN-Based LEDs. United States. https://doi.org/10.2172/1001208
Fini, Paul. 2010. "High-Efficiency Non-Polar GaN-Based LEDs". United States. https://doi.org/10.2172/1001208. https://www.osti.gov/servlets/purl/1001208.
@article{osti_1001208,
title = {High-Efficiency Non-Polar GaN-Based LEDs},
author = {Fini, Paul},
abstractNote = {Inlustra Technologies with subcontractor U.C. Santa Barbara conducted a project with the principle goal of demonstrating high internal quantum efficiency blue (430 nm) and green (540nm) light emitting diodes (LEDs) on low-defect density non-polar GaN wafers. Inlustra pursued the fabrication of smooth thick a-plane and m-plane GaN films, as well as defect reduction techniques such as lateral epitaxial overgrowth (LEO) to uniformly lower dislocation density in these films. Limited free-standing wafers were produced as well. By the end of the reporting period, Inlustra had met its milestone of dislocation reduction to < 5 x 10{sup 6} cm{sup -2}. Stacking faults were still present in appreciable density ({approx} 1 x 10{sup 5} cm{sup -1}), but were not the primary focus of defect reduction since there have been no published studies establishing their detrimental effects on LED performance. Inlustra's LEO progress built a solid foundation upon which further commercial development of GaN substrates will occur. UCSB encountered multiple delays in its LED growth and fabrication efforts due to unavoidable facilities outages imposed by ongoing construction in an area adjacent to the metalorganic chemical vapor deposition (MOCVD) laboratory. This, combined with the large amount of ab initio optimization required for the MOCVD system used during the project, resulted in unsatisfactory LED progress. Although numerous blue-green photoluminescence results were obtained, only a few LED structures exhibited electroluminescence at appreciable levels. UCSB also conducting extensive modeling (led by Prof. Van de Walle) on the problem of non-radiative Auger recombination in GaN-based LED structures, which has been posited to contribute to LED efficiency 'droop' at elevated current density. Unlike previous modeling efforts, UCSB's approach was truly a first-principles ab initio methodology. Building on solid numerical foundations, the Auger recombination rates of In{sub x}Ga{sub 1-x}N alloys were calculated from first-principles density-functional and many-body-perturbation theory. The differing mechanisms of inter- and intra-band recombination were found to affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient was calculated to be as large as 2 x 10{sup -30} cm{sup 6} s{sup -1}; in the infrared it is even larger. These results indicated that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters, whether on non-polar or polar crystal planes.},
doi = {10.2172/1001208},
url = {https://www.osti.gov/biblio/1001208}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 30 00:00:00 EST 2010},
month = {Tue Nov 30 00:00:00 EST 2010}
}