Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion
The growth of carbon nanotubes (CNTs) on polycrystalline silicon substrates was studied to improve the design of CNT field emission sources for microelectromechanical systems (MEMS) applications and vacuum microelectronic devices (VMDs). Microwave plasma-enhanced chemical vapor deposition (PECVD) was used for CNT growth, resulting in CNTs that incorporate the catalyst particle at their base. The kinetics of CNT growth on polysilicon were compared to growth on Si (100) using the model of Deal and Grove, finding activation energies of 1.61 and 1.54 eV for the nucleation phase of growth and 1.90 and 3.69 eV for the diffusion-limited phase on Si (100)more »