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  1. Unveiling the structure and electronic characteristics of amorphous GeS for high performance threshold switching

    Ovonic threshold switching selectors are widely studied owing to the essential application in high density phase-change memory. Amorphous GeS is proposed as a potential candidate for the excellent performance. However, the knowledge of amorphous GeS is still insufficient up to date. Here, we have studied the structure and electronic characteristics of GeS in the amorphization process, by using ab initio molecular dynamics simulations. The results indicate that the amorphous GeS is mainly made up of Ge–S bonds. The Ge- and S-centered clusters are dominantly in the form of octahedral structures in liquid GeS. Furthermore, during the amorphization process, most ofmore » Ge-centered clusters become highly coordinated octahedrons while a small number of Ge-centered clusters change to tetrahedrons, and the S-centered clusters deviate from the octahedral structure gradually. In addition, the large bandgap and the relatively small mid-gap states in amorphous GeS lead to a high switching voltage.« less
  2. Unravelling the atomic mechanisms of tetrahedral doping in chalcogenide glass for electrical switching materials

    This study highlights the crucial role of Si doping in OTS materials by revealing the atomic mechanisms of Si doping that result in high thermal stability, enhanced endurance, and reduced V th drift in a-GeSiSe materials for ovonic threshold switching (OTS) through first-principles calculations.
  3. Tailoring Mid–Gap States of Chalcogenide Glass by Pressure–Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials

    Phase change memory (PCM) and ovonic threshold switching (OTS) materials using chalcogenide glass are essential elements in advanced 3D memory chips. The mid–gap states, induced by the disorder and defects in the glass, are the physical mechanisms of the electrical switching behavior, while the origin of these trap states is still under debate and the medium–range clusters that break the global octet rule, such as over–coordinated atoms, are known to be responsible in various glass. Here, it is discovered that a large fraction of over–coordinated clusters fails to generate mid–gap states, which are probably caused by hypervalent bonding, a multi–centeredmore » covalent bond participated by delocalized lone–pair electrons. This is confirmed by the pressure–driven simulations of amorphous GeSe models, in which it is found that octahedral motifs and hypervalent bonds prevent the over–coordinated medium–range clusters from providing excessive electrons. In practical applications, compatible dopants can be used to change the number of hypervalent bonds, thus controlling the number of mid–gap states and consequently the performance of PCM and OTS materials. Finally, these results reveal the origin of mid–gap states in chalcogenide glasses, enabling extensive control in the development of pioneering electrical switching materials.« less
  4. Neural network potential for Zr–Rh system by machine learning

    Zr–Rh metallic glass has enabled its many applications in vehicle parts, sports equipment and so on due to its outstanding performance in mechanical property, but the knowledge of the microstructure determining the superb mechanical property remains yet insufficient. Here, we develop a deep neural network potential of Zr–Rh system by using machine learning, which breaks the dilemma between the accuracy and efficiency in molecular dynamics simulations, and greatly improves the simulation scale in both space and time. Here, the results show that the structural features obtained from the neural network method are in good agreement with the cases in abmore » initio molecular dynamics simulations. Furthermore, we build a large model of 5400 atoms to explore the influences of simulated size and cooling rate on the melt-quenching process of Zr77Rh23. Our study lays a foundation for exploring the complex structures in amorphous Zr77Rh23, which is of great significance for the design and practical application.« less
  5. A deep learning interatomic potential developed for atomistic simulation of carbon materials

    Interatomic potentials based on neural-network machine learning method have attracted considerable attention in recent years owing to their outstanding ability to balance the accuracy and efficiency in atomistic simulations. In this work, a neural-network potential (NNP) for carbon is generated to simulate the structural properties of various carbon structures. The potential is trained using a database consisting of crystalline and liquid structures obtained by the first-principles density functional theory (DFT) calculations. The developed potential accurately predicts the energies and forces in crystalline and liquid carbon structures, the energetic stability of defected graphene, and the structures of amorphous carbon as themore » function of density. As a result, the excellent accuracy and transferability of the NNP provide a promising tool for accurate atomistic simulations of various carbon materials with faster speed and much lower cost.« less
  6. Luminescence mechanism in hydrogenated silicon quantum dots with a single oxygen ligand

    Though photoluminescence (PL) of Si quantum dots (QDs) has been known for decades and both theoretical and experimental studies have been extensive, their luminescence mechanism has not been elaborated. Several models have been proposed to explain the mechanism. A deep insight into the origin of light emissions in Si QDs is necessary. This work calculated the ground- and excited state properties of hydrogenated Si QDs with various diameters, including full hydrogen passivation, single Si=O ligands, single epoxide and coexisting Si=O and epoxide structures in order to investigate the dominant contribution states for luminescence. The results revealed that even a singlemore » oxygen atom in hydrogenated Si QDs can dramatically change their electronic and optical properties. Intriguingly, we found that a size-independent emission, the strongest among all possible emissions, was induced by the single Si=O passivated Si-QDs. In non-oxidized Si-QDs exhibiting a core-related size-tunable emission, the luminescence properties can be modulated by the ligands of Si QDs, and a very small number of oxygen ligands can strongly influence the luminescence of nanocrystalline silicon. Our findings deepen the understanding of the PL mechanism of Si QDs and can further promote the development of silicon-based optoelectronic devices.« less
  7. Origin of short- and medium-range order in supercooled liquid Ge3Sb2Te6 from ab initio molecular dynamics simulations

    Phase-change materials such as Ge–Sb–Te compounds have attracted much attention due to their potential value in electrical data storage. In contrast to the amorphous and crystalline phases, supercooled liquids are far from being deeply understood despite their inevitable role in both amorphization and crystallization processes. To this end, we have studied the dynamics properties and structural characteristics of liquid and supercooled liquid Ge3Sb2Te6 during the fast cooling process. As the temperature decreases, chemical bonds become more homogeneous, but coordination numbers of Ge, Sb and Te atoms change very little. Meanwhile, the structural order of short-range configuration is obviously enhanced. Furthermore » studies suggest that Ge-centered, Sb-centered and Te-centered configurations change to the more ordered defective octahedrons mainly by adjusting the bond-angle relationship and bond length, rather than just by changing the coordination environment. It is the more ordered octahedrons that promote the formation of medium-range order. Our findings provide a deep insight into the origin of local structural order in supercooled liquid Ge3Sb2Te6, which is of great importance for the comprehensive understanding of amorphization and crystallization processes.« less
  8. Local structure origin of ultrafast crystallization driven by high-fidelity octahedral clusters in amorphous Sc0.2Sb2Te3

    Phase-change material Sc0.2Sb2Te3 (SST) can remarkably boost the writing speed of memory devices due to the extremely fast crystallization. It was reflected that the fast crystallization is because Sc stabilizes the 4-fold rings which act as precursors of nuclei in the amorphous phase. Here, by using first-principles molecular dynamics simulations, we studied the local structures in the liquid and amorphous SST at various temperatures. The findings reveal that Sc-centered configurations are almost in the form of stable octahedral clusters, which enhances the local order of the amorphous phase. Different from Sb- and Te-centered clusters which have lower coordination numbers, Sc-centeredmore » clusters are mainly in high-coordinated octahedral structures. These Sc-centered octahedral clusters present a high stability in supercooled liquid and amorphous states, remarkably reducing the incubation time of nucleation and speeding up the crystallization. Our study reveals the role of Sc atoms in the liquid and amorphous structure, paving the way for the application of Sc-based phase-change memory.« less
  9. Bergman-type medium range order in amorphous Zr77Rh23 alloy studied by ab initio molecular dynamics simulations

    In recent years, some arguments about the existence of medium-range order (MRO) in the Zr-Rh system have been put forward. However, research on the structural features of the Zr-Rh binary alloy at the atomic level is still lacking. This study uses ab initio molecular dynamics simulations to systematically study the local structures of Zr77Rh23 from the liquid to the glassy states. Pair correlation function (PCF), coordination number (CN), Honeycutt–Anderson(HA) index, bond-angle distribution functions, and the Voronoi tessellation method are used to reveal a clear icosahedral-like configuration in the amorphous Zr77Rh23 alloy. It is noteworthy that the splitting in the secondmore » peak of the partial PDF implies the existence of a medium range order (MRO) in the Zr77Rh23 system. We obtain the local order in three-dimensional atomic density distributions by using a new atomistic cluster alignment (ACA) method. Interestingly, a Bergman-type MRO is observed in the glassy Zr77Rh23. Furthermore, the spatial distribution and connections of icosahedral-like clusters are shown to further demonstrate the MRO network. In conclusion, our findings shed light on the nature of atomic local structures of amorphous Zr77Rh23 alloy and have important implications to understanding the formation of various MROs in metallic glasses.« less
  10. Pressure induced short-range structural changes in supercooled liquid Ge2Sb2Te5

    Phase-change material such as Ge2Sb2Te5 is usually utilized to store data due to the pronounced contrast in optical and electrical properties between crystalline and amorphous phases. As the density differs in the two phases, it is necessary to explore the influence of pressure on the structures of Ge2Sb2Te5, especially for the supercooled liquid which is an inevitable state in the formation of the two phases. The short-range structures in supercooled liquid Ge2Sb2Te5 under compression have been investigated by using ab initio molecular dynamics simulation. The supercooled liquid eventually changes to a solid with an increase in pressure. During the process,more » tetrahedrons decrease slightly, revealing that tetrahedral structures are insensitive to the pressure. Octahedrons increase as the pressure is less than 3.7 GPa and then decrease, suggesting that a moderate pressure can promote the formation of octahedrons. The body-centered-cubic, face-centered-cubic and hexagonal closed-packed structures are observed at 9.9 GPa and then increase gradually. Additionally, it is noticed that Sb- and Te-centered clusters prefer Ge-centered clusters to forming the high-coordinated short-range structures during the compression process. Here our research makes us aware of the effects of pressure on short-range structures in supercooled liquid, which is of great importance in the application of phase-change materials.« less
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