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Here, we propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In_0.53Ga_0.47As host matrices. Moreover, fluence-dependent optical-pump terahertz-probe measurements suggest the TbAs nanoparticles have a band gap and provide information on the carrier dynamics, which are determined by the band alignment. Spectrophotometry measurements provide the energy of optical transitions in the nanocomposite systems and reveal a large blue shift in the absorption energy when the host matrix is changed from In_0.53Ga_0.47As to GaAs. Finally, Hall data provides the approximate Fermi level in each system. From this data, we deduce that the TbAs:GaAs system forms a typemore » I (straddling) heterojunction and the TbAs:In_0.53Ga_0.47As system forms a type II (staggered) heterojunction.« less