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We present that metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO₃-Al₂O₃-Si:SrTiO₃ multi-dielectric architecture have been fabricated employing a combination of pulsed laser and atomic layer deposition techniques. The voltage linearity, temperature coefficients of capacitance, dielectric and electrical properties upon thickness were studied under a wide range of temperature (200–400 K) and electric field stress (61.5 MV/cm). A high capacitance density of 31 fF/μm², a low voltage coefficient of capacitance of 363 ppm/V², a low temperature coefficient of capacitance of <644 ppm/K, and an effective dielectric constant of 133 are demonstrated in a MIM capacitor with 1.4 nm capacitance equivalent thickness inmore » a 40 nm thick ultra high-k multi-dielectric stack. Finally, all of these properties make this dielectric architecture of interest for next generation, highly scaled MIM capacitor applications.« less