5 Search Results

We measure spin-orbit torques (SOTs) in a model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt film acts as the sole source of charge-to-spin conversion. A small fieldlike SOT independent of Pt thickness suggests a weak Rashba-Edelstein effect at the ferrite/Pt interface. By contrast, we observe a sizable dampinglike SOT that depends on the Pt thickness, from which we deduce the dominance of an extrinsic spin-Hall effect (skew scattering) and Dyakonov-Perel spin relaxation in the crystalline Pt film. Furthermore, our results point to amore » large internal spin-Hall ratio of ≈ 0.8 in epitaxial Pt. Furthermore, our experimental work takes an essential step towards understanding the mechanisms of charge-spin interconversion and SOTs in Pt-based heterostructures, which are crucial for power-efficient spintronic devices.« less

Here, we study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co₄₀Fe₄₀B₂₀ (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e.,more » in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.« less

The current-induced spin-orbit torques (SOTs) in the perpendicularly magnetized Ir₂₂Mn₇₈/ Co₂₀Fe₆₀B₂₀/MgO structures are investigated. The damping- and field-like torques are characterized using a harmonic technique. The spin Hall angle of Ir₂₂Mn₇₈ is determined to be $$θ$$_SHE$=+0.057 ± 60.002$. The SOT-driven magnetization switching is also demonstrated with the assistance of an external in-plane field. Furthermore, the magneto-optical Kerr effect imaging experiments show that the magnetization switching is realized through domain nucleation and domain wall motion. These results may promise potential practical applications in high-performance SOT devices based on the antiferromagnetic materials.

We studied the impact of different insertion layers (Ta, Pt, and Mg) at the CoFeB|MgO interface on voltage-controlled magnetic anisotropy (VCMA) effect and other magnetic properties. Inserting a very thin Mg layer of 0.1–0.3 nm yielded a VCMA coefficient of 100 fJ/V-m, more than 3 times higher than the average values of around 30 fJ/V-m reported in Ta|CoFeB|MgO-based structures. Ta and Pt insertion layers also showed a small improvement, yielding VCMA coefficients around 40 fJ/V-m. Electrical, magnetic, and X-ray diffraction results reveal that a Mg insertion layer of around 1.2 nm gives rise to the highest perpendicular magnetic anisotropy, saturationmore » magnetization, as well as the best CoFe and MgO crystallinity. Other Mg insertion thicknesses give rise to either under- or over-oxidation of the CoFe|MgO interface; a strong over-oxidation of the CoFe layer leads to the maximum VCMA effect. These results show that precise control over the Mg insertion thickness and CoFe oxidation level at the CoFeB|MgO interface is crucial for the development of electric-field-controlled perpendicular magnetic tunnel junctions with low write voltage.« less

Here, we study the magnetic properties of W/Co₄₀Fe₄₀B₂₀ (CoFeB)/MgO films using the spin-torque ferromagnetic resonance (ST-FMR) technique. This study takes the advantage of the spin Hall magnetoresistance (SMR) for generating an oscillating resistance, which is one of the necessary requirements for obtaining mixing voltage in the ST-FMR technique. We have measured both the as-grown and the annealed samples with different CoFeB layer thicknesses, which include the in-plane and out-of-plane magnetic anisotropies. The spectra for these two types of anisotropies show distinct signatures. By analyzing the ST-FMR spectra, we extract the effective anisotropy field for both types of samples. In addition,more » we investigate the influence of CoFeB thickness and annealing on the Gilbert damping constant. Our experiments show that by taking advantage of SMR, the ST-FMR measurement acts as an effective tool with high sensitivity for studying the magnetic properties of ultrathin magnetic films.« less