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Title: High-resolution x-ray diffraction measurements of SiGe/Si structures

Book ·
OSTI ID:99498
; ;  [1]
  1. IBM Research Div., Yorktown Heights, NY (United States). T.J. Watson Research Center

High-resolution x-ray diffraction is an excellent probe of strain relaxation in complex SiGe structures. The high flux provided by synchrotron sources enables one to make extensive reciprocal space map measurements and evaluate many samples. The diffraction peak positions of each layer in a step-graded structure, measured for two different reflections, yield quantitative values for the relaxation and alloy composition in the layer. Grazing-incidence diffraction allows one to determine the in-plane structure of very thin layers, which have thickness-broadened peaks at conventional diffraction geometries. They demonstrate the power of these techniques with two examples.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
DOE Contract Number:
AC02-76CH00016
OSTI ID:
99498
Report Number(s):
CONF-941144-; ISBN 1-55899-277-4; TRN: 95:019141
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Applications of synchrotron radiation techniques to materials science II; Terminello, L.J. [ed.] [Lawrence Livermore National Lab., CA (United States)]; Shinn, N.D. [ed.] [Sandia National Labs., Albuquerque, NM (United States)]; Ice, G.E. [ed.] [Oak Ridge National Lab., TN (United States)]; D`Amico, K.L. [ed.] [X-ray Analytics, Ltd., Hinsdale, IL (United States)]; Perry, D.L. [ed.] [Lawrence Berkeley Lab., CA (United States)]; PB: 349 p.; Materials Research Society symposium proceedings, Volume 375
Country of Publication:
United States
Language:
English