Defects induced by protons and {gamma}-rays in semi-insulating GaAs detectors
Book
·
OSTI ID:99472
- Dipartimento di Fisica, Bologna (Italy)
- FRAE-CNR, Bologna (Italy)
- Facolta di Ingegneria, Modena (Italy)
- Istituto di Elettrotecnica, Cagliari (Italy)
- ALENIA S.p.A., Roma (Italy)
Semi-insulating gallium arsenide has been irradiated by protons and by gamma-rays with different doses. The irradiation-induced deep level defects have been investigated by current transient spectroscopy to find their energy, capture cross sections and generation rate. Two electron traps at E{sub c}{minus}0.14V(E13) and E{sub c}{minus}0.70eV(E4) and a hole trap at E{sub v}+0.41eV(H2) in addition to the levels existing before the irradiation have been detected in the irradiated samples. These findings have been related to the performance of gallium arsenide charge particle detectors.
- OSTI ID:
- 99472
- Report Number(s):
- CONF-941144-; ISBN 1-55899-275-8; TRN: 95:019130
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Microstructure of irradiated materials; Robertson, I.M. [ed.] [Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering]; Rehn, L.E. [ed.] [Argonne National Lab., IL (United States). Materials Science Div.]; Zinkle, S.J. [ed.] [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.]; Phythian, W.J. [ed.] [AEA Technology-Harwell, Oxon (United Kingdom)]; PB: 588 p.; Materials Research Society symposium proceedings, Volume 373
- Country of Publication:
- United States
- Language:
- English
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