Growth and Electronic Properties of GaN/ZnO Solid Solution Nanowires
Abstract
We have grown single-crystal (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid-solution nanowires using nanostructured ZnGa{sub 2}O{sub 4} precursor prepared by a sol-gel method. From electrical transport measurements in individual nanowire field-effect transistors, we have identified the conduction as n-type and obtained a background carrier density (-10{sup 19} cm{sup -3}) and an electron mobility (-1 cm{sup 2}/V s) that are consistent with chemical disorder and a large number of charge traps, as confirmed by the devices photocurrent response. From the dependence of the device photoresponse on incident light wavelength, we have determined the energy band gap of (Ga{sub 0.88}Zn{sub 0.12})(N{sub 0.88}O{sub 0.12}) to be as much as -0.6 eV lower than that of GaN or ZnO.
- Authors:
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Org.:
- DOE - Office Of Science
- OSTI Identifier:
- 993802
- Report Number(s):
- BNL-93872-2010-JA
Journal ID: ISSN 0003-6951; APPLAB; R&D Project: NC-001; TRN: US201024%%141
- DOE Contract Number:
- DE-AC02-98CH10886
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 97; Journal Issue: 8; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 08 HYDROGEN; CARRIER DENSITY; ELECTRON MOBILITY; PHOTOCURRENTS; PRECURSOR; SOLID SOLUTIONS; TRANSISTORS; TRANSPORT; GaN/ZnO solid solution; nanowires; electrical properties; growth; functional nanomaterials
Citation Formats
Han, W Q, Zhang, Y, Nam, C -Y, Black, C T, and Mendez, E E. Growth and Electronic Properties of GaN/ZnO Solid Solution Nanowires. United States: N. p., 2010.
Web. doi:10.1063/1.3483132.
Han, W Q, Zhang, Y, Nam, C -Y, Black, C T, & Mendez, E E. Growth and Electronic Properties of GaN/ZnO Solid Solution Nanowires. United States. https://doi.org/10.1063/1.3483132
Han, W Q, Zhang, Y, Nam, C -Y, Black, C T, and Mendez, E E. 2010.
"Growth and Electronic Properties of GaN/ZnO Solid Solution Nanowires". United States. https://doi.org/10.1063/1.3483132.
@article{osti_993802,
title = {Growth and Electronic Properties of GaN/ZnO Solid Solution Nanowires},
author = {Han, W Q and Zhang, Y and Nam, C -Y and Black, C T and Mendez, E E},
abstractNote = {We have grown single-crystal (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid-solution nanowires using nanostructured ZnGa{sub 2}O{sub 4} precursor prepared by a sol-gel method. From electrical transport measurements in individual nanowire field-effect transistors, we have identified the conduction as n-type and obtained a background carrier density (-10{sup 19} cm{sup -3}) and an electron mobility (-1 cm{sup 2}/V s) that are consistent with chemical disorder and a large number of charge traps, as confirmed by the devices photocurrent response. From the dependence of the device photoresponse on incident light wavelength, we have determined the energy band gap of (Ga{sub 0.88}Zn{sub 0.12})(N{sub 0.88}O{sub 0.12}) to be as much as -0.6 eV lower than that of GaN or ZnO.},
doi = {10.1063/1.3483132},
url = {https://www.osti.gov/biblio/993802},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 97,
place = {United States},
year = {Mon Aug 23 00:00:00 EDT 2010},
month = {Mon Aug 23 00:00:00 EDT 2010}
}