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Title: Growth and Electronic Properties of GaN/ZnO Solid Solution Nanowires

Abstract

We have grown single-crystal (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid-solution nanowires using nanostructured ZnGa{sub 2}O{sub 4} precursor prepared by a sol-gel method. From electrical transport measurements in individual nanowire field-effect transistors, we have identified the conduction as n-type and obtained a background carrier density (-10{sup 19} cm{sup -3}) and an electron mobility (-1 cm{sup 2}/V s) that are consistent with chemical disorder and a large number of charge traps, as confirmed by the devices photocurrent response. From the dependence of the device photoresponse on incident light wavelength, we have determined the energy band gap of (Ga{sub 0.88}Zn{sub 0.12})(N{sub 0.88}O{sub 0.12}) to be as much as -0.6 eV lower than that of GaN or ZnO.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Sponsoring Org.:
DOE - Office Of Science
OSTI Identifier:
993802
Report Number(s):
BNL-93872-2010-JA
Journal ID: ISSN 0003-6951; APPLAB; R&D Project: NC-001; TRN: US201024%%141
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 97; Journal Issue: 8; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
08 HYDROGEN; CARRIER DENSITY; ELECTRON MOBILITY; PHOTOCURRENTS; PRECURSOR; SOLID SOLUTIONS; TRANSISTORS; TRANSPORT; GaN/ZnO solid solution; nanowires; electrical properties; growth; functional nanomaterials

Citation Formats

Han, W Q, Zhang, Y, Nam, C -Y, Black, C T, and Mendez, E E. Growth and Electronic Properties of GaN/ZnO Solid Solution Nanowires. United States: N. p., 2010. Web. doi:10.1063/1.3483132.
Han, W Q, Zhang, Y, Nam, C -Y, Black, C T, & Mendez, E E. Growth and Electronic Properties of GaN/ZnO Solid Solution Nanowires. United States. https://doi.org/10.1063/1.3483132
Han, W Q, Zhang, Y, Nam, C -Y, Black, C T, and Mendez, E E. 2010. "Growth and Electronic Properties of GaN/ZnO Solid Solution Nanowires". United States. https://doi.org/10.1063/1.3483132.
@article{osti_993802,
title = {Growth and Electronic Properties of GaN/ZnO Solid Solution Nanowires},
author = {Han, W Q and Zhang, Y and Nam, C -Y and Black, C T and Mendez, E E},
abstractNote = {We have grown single-crystal (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid-solution nanowires using nanostructured ZnGa{sub 2}O{sub 4} precursor prepared by a sol-gel method. From electrical transport measurements in individual nanowire field-effect transistors, we have identified the conduction as n-type and obtained a background carrier density (-10{sup 19} cm{sup -3}) and an electron mobility (-1 cm{sup 2}/V s) that are consistent with chemical disorder and a large number of charge traps, as confirmed by the devices photocurrent response. From the dependence of the device photoresponse on incident light wavelength, we have determined the energy band gap of (Ga{sub 0.88}Zn{sub 0.12})(N{sub 0.88}O{sub 0.12}) to be as much as -0.6 eV lower than that of GaN or ZnO.},
doi = {10.1063/1.3483132},
url = {https://www.osti.gov/biblio/993802}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 97,
place = {United States},
year = {Mon Aug 23 00:00:00 EDT 2010},
month = {Mon Aug 23 00:00:00 EDT 2010}
}