Charge Separation of Wurtzite/Zinc-blende Heterojunction GaN Nanowires
Journal Article
·
· Chemphyschem, 11(15):3329-3332
The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterostructure GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results should have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 991076
- Report Number(s):
- PNNL-SA-74462; CPCHFT; KC0201020; TRN: US201020%%730
- Journal Information:
- Chemphyschem, 11(15):3329-3332, Vol. 11, Issue 15; ISSN 1439-4235
- Country of Publication:
- United States
- Language:
- English
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