Carbon Nanotube Memory Elements
- ORNL
Carbon nanotubes are among the most cited prototypical materials for nanoelectronics and information storage devices, a dominant position that originates from their intrinsic structural and electronic properties. In this chapter we review the developments in memory elements that directly exploit the unique properties of carbon nanotubes. Fundamental operational principles and characteristics are examined for the different types of carbon nanotube-based memory devices along with the current status of experimental fabrication and scalability. These include memory elements based on carbon nanotube field-effect transistors (CNFET), nanoelectromechanical systems (NEMS), and electromigration. Many of these devices show tremendous promise for providing enhanced densities, lower power requirements, more efficient read/write processes, and non-volatility of data.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). National Center for Computational Sciences (NCCS)
- Sponsoring Organization:
- USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 990222
- Country of Publication:
- United States
- Language:
- English
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