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Title: Theory of quantum coherence phenomena in semiconductor quantum dots.

Journal Article · · Proposed for publication in Physical Review A.

This paper explores quantum-coherence phenomena in a semiconductor quantum-dot structure. The calculations predict the occurrence of inversionless gain, electromagnetically induced transparency, and refractive-index enhancement in the transient regime for dephasing rates typical under room temperature and high excitation conditions. They also indicate deviations from atomic systems because of strong many-body effects. Specifically, Coulomb interaction involving states of the quantum dots and the continuum belonging to the surrounding quantum well leads to collision-induced population redistribution and many-body energy and field renormalizations that modify the magnitude, spectral shape, and time dependence of quantum-coherence effects.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
990031
Report Number(s):
SAND2003-2365J; PLRAAN; TRN: US201020%%98
Journal Information:
Proposed for publication in Physical Review A., Vol. 68, Issue 5; ISSN 1050-2947
Country of Publication:
United States
Language:
English