skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Silicon as an advanced window material for high power gyrotrons

Abstract

The absorptivity of high-purity grades of silicon (Si) and its reduction by subsequent doping procedures are investigated. The dielectric data are given for the wide range of frequencies (30 -330 GHz) and temperatures (30 -330 K) in comparison with the data set for sapphire. The advanced material performance in high power window applications is discussed taking into account both dielectric properties of the optimized silicon grades and thermal conductivity.

Authors:
 [1]; ;  [2]
  1. Applied Physics Institute, Nizhny Novgorod (Russian Federation)
  2. Institute Chemistry of High-Purity Substances, Nizhny Novgorod (Russian Federation); and others
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
98802
Resource Type:
Journal Article
Journal Name:
International Journal of Infrared and Millimeter Waves
Additional Journal Information:
Journal Volume: 16; Journal Issue: 5; Other Information: PBD: May 1995
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION; MICROWAVE AMPLIFIERS; MATERIALS TESTING; WINDOWS; THERMAL CONDUCTIVITY; SILICON; FREQUENCY DEPENDENCE; PLASMA HEATING; TEMPERATURE DEPENDENCE

Citation Formats

Parshin, V V, Andreev, B A, and Gusev, A V. Silicon as an advanced window material for high power gyrotrons. United States: N. p., 1995. Web. doi:10.1007/BF02066662.
Parshin, V V, Andreev, B A, & Gusev, A V. Silicon as an advanced window material for high power gyrotrons. United States. https://doi.org/10.1007/BF02066662
Parshin, V V, Andreev, B A, and Gusev, A V. 1995. "Silicon as an advanced window material for high power gyrotrons". United States. https://doi.org/10.1007/BF02066662.
@article{osti_98802,
title = {Silicon as an advanced window material for high power gyrotrons},
author = {Parshin, V V and Andreev, B A and Gusev, A V},
abstractNote = {The absorptivity of high-purity grades of silicon (Si) and its reduction by subsequent doping procedures are investigated. The dielectric data are given for the wide range of frequencies (30 -330 GHz) and temperatures (30 -330 K) in comparison with the data set for sapphire. The advanced material performance in high power window applications is discussed taking into account both dielectric properties of the optimized silicon grades and thermal conductivity.},
doi = {10.1007/BF02066662},
url = {https://www.osti.gov/biblio/98802}, journal = {International Journal of Infrared and Millimeter Waves},
number = 5,
volume = 16,
place = {United States},
year = {Mon May 01 00:00:00 EDT 1995},
month = {Mon May 01 00:00:00 EDT 1995}
}