Tilted domain growth of metalorganic chemical vapor (MOCVD)-grown ZnO(0001) on α-Al2O3(0001)
Journal Article
·
· Journal of Materials Research
ZnO grown on α-Al2O3 (0001) generally possesses an orientation such that α-Al2O3 (0001)//ZnO(0001) and two in-plane domains nucleate such that: α-Al2O3 [11-20]//ZnO[11-20] and/or α-Al2O3 [11-20]//ZnO[10-10]. In this paper, we report a new growth mode for ZnO grown on α-Al2O3 (0001) using MOCVD. We find that α-Al2O3 [11-20]//ZnO[10-10] but the (0001) plane of ZnO is tilted relative to the (0001) plane of α-Al2O3 such that ZnO(0001) is almost parallel to the α-Al2O3 (-1104) plane. This orientation reduces the extent of lattice mismatch. The interface between ZnO and α-Al2O3 is abrupt and possesses periodic dislocations.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 985039
- Report Number(s):
- PNNL-SA-56725; applab; 19595; KP1704020; TRN: US201016%%1656
- Journal Information:
- Journal of Materials Research, Vol. 23, Issue 01; ISSN 0884-2914
- Publisher:
- Materials Research Society
- Country of Publication:
- United States
- Language:
- English
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Thu Nov 01 00:00:00 EST 1990
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OSTI ID:985039
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