Electronic and defect structure of CuSCN
We calculate the band structure, bonding characteristics and basic native defect configurations of hexagonal copper thiocyanate, β-CuSCN, for the first time. β-CuSCN is predicted to be an indirect-gap semiconductor with an unusual orbital character: While the highest valence bands have the expected character of Cu 3d levels hybridized with S 3p states, the conduction band minimum (at the K point of the hexagonal Brillouin zone) has mostly cyanide antibonding character. This quasi-molecular character results in some unusual properties, including that the electron effective masses are comparable or even larger than the hole effective masses. However, optical absorption measurements on polycrystalline films do not support the predicted indirect nature of the lowest transitions, though they also do not clearly contradict it. The dominant p-type character of this material is explained in terms of copper vacancies, possibly augmented by CN unit vacancies, which are expected to be acceptors. By contrast, a vacancy of a complete SCN unit would be a donor, but is not expected to occur at significant concentrations in this material.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 982556
- Report Number(s):
- PNNL-SA-70397; 34725; TRN: US201014%%380
- Journal Information:
- Journal of Physical Chemistry. C, Vol. 114, Issue 19; ISSN 1932-7447
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
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