Improved Carrier-Transport Properties of Passivated Cdmnte Crystals
By analyzing photoconductive decay curves, we compared the surface recombination velocities of semi-insulating CdMnTe:In crystals grown by the vertical Bridgman method with or without surface passivation. Sulfur passivation effectively prevents the formation of a conductive Te oxide layer on the CdMnTe surface and reduces the surface recombination velocities by about one third. We demonstrated, from IR observations of the distribution maps of Te precipitates, that their configuration affects the anomalous photoconductive decay curves and the gamma-ray spectrum in some areas of the CdMnTe crystal. Notably, not only the size but also the spatial configuration of the Te precipitates modulates the carrier-transport properties.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 980253
- Report Number(s):
- BNL-93171-2010-JA; JAPIAU; TRN: US201015%%1638
- Journal Information:
- Journal of Applied Physics, Vol. 105, Issue 9; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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