Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen
- Auburn University, Auburn, Alabama
- Vanderbilt University
- ORNL
- Dow Corning Corporation, Midland, MI
The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO{sub 2} on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si/SiO{sub 2} passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC/SiO{sub 2} undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 x 10{sup 12} cm{sup -2}eV{sup -1} to about 6 x 10{sup 11} cm{sup -2}eV{sup -1} at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11-20) 4H-SiC.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 978128
- Resource Relation:
- Conference: 2003 MRS Fall Meeting, Boston, MA, USA, 20031201, 20031205
- Country of Publication:
- United States
- Language:
- English
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