skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: The effects of charge transfer inefficiency (CTI) on galaxy shape measurements

Journal Article · · Submitted to Publ.Astron.Soc.Pac.
DOI:https://doi.org/10.1086/651675· OSTI ID:977201

We examine the effects of charge transfer inefficiency (CTI) during CCD readout on the demanding galaxy shape measurements required by studies of weak gravitational lensing. We simulate a CCD readout with CTI such as that caused by charged particle radiation damage in space-based detectors. We verify our simulations on real data from fully depleted p-channel CCDs that have been deliberately irradiated in a laboratory. We show that only charge traps with time constants of the same order as the time between row transfers during readout affect galaxy shape measurements. We simulate deep astronomical images and the process of CCD readout, characterizing the effects of CTI on various galaxy populations. Our code and methods are general and can be applied to any CCDs, once the density and characteristic release times of their charge trap species are known. We baseline our study around p-channel CCDs that have been shown to have charge transfer efficiency up to an order of magnitude better than several models of n-channel CCDs designed for space applications. We predict that for galaxies furthest from the readout registers, bias in the measurement of galaxy shapes, {Delta}e, will increase at a rate of (2.65 {+-} 0.02) x 10{sup -4} yr{sup -1} at L2 for accumulated radiation exposure averaged over the solar cycle. If uncorrected, this will consume the entire shape measurement error budget of a dark energy mission surveying the entire extragalactic sky within about 4 yr of accumulated radiation damage. However, software mitigation techniques demonstrated elsewhere can reduce this by a factor of {approx}10, bringing the effect well below mission requirements. This conclusion is valid only for the p-channel CCDs we have modeled; CCDs with higher CTI will fare worse and may not meet the requirements of future dark energy missions. We also discuss additional ways in which hardware could be designed to further minimize the impact of CTI.

Research Organization:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-07CH11359
OSTI ID:
977201
Report Number(s):
FERMILAB-PUB-10-089-A-CD; arXiv eprint number arXiv:1002.1479; TRN: US1002958
Journal Information:
Submitted to Publ.Astron.Soc.Pac., Journal Name: Submitted to Publ.Astron.Soc.Pac.
Country of Publication:
United States
Language:
English

Similar Records

Proton-induced charge transfer degradation in CCDs for near-room temperature applications
Conference · Thu Dec 01 00:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:977201

Improved noise performance from the next-generation buried-channel p-MOSFET SiSeROs
Journal Article · Mon May 15 00:00:00 EDT 2023 · Journal of Astronomical Telescopes, Instruments, and Systems · OSTI ID:977201

Proton radiation damage in high-resistivity n-type silicon CCDs
Conference · Thu Dec 20 00:00:00 EST 2001 · OSTI ID:977201