Polarization and adiabatic pumping in inhomogeneous crystals

Journal Article · Thu Jan 01 00:00:00 EST 2009 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.102.087602· OSTI ID:971581

Xiao, Di ^[1]; Shi, Junren ^[2]; Clougherty, Dennis ^[3]; Niu, Qian ^[4]

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1. ORNL
2. Institute of Physics, Chinese Academy of Science
3. University of Vermont
4. University of Texas, Austin

We develop a general theory of electric polarization in crystals with inhomogeneous order. We show that the inhomogeneity-induced polarization can be classified into two parts: a perturbative contribution stemming from a correction to the basis functions and a topological contribution described in terms of the Chern-Simons form of the Berry gauge fields. The latter is determined up to an uncertainty quantum, which is the second Chern number in appropriate units. Our theory provides an exhaustive link between microscopic models and the macroscopic polarization.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 971581
• Journal Information: Physical Review Letters, Vol. 102, Issue 8; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALS
POLARIZATION
ORDER PARAMETERS
MATHEMATICAL MODELS