Sublimation Growth of Titanium Nitride Crystals
- Kansas State University
- ORNL
The sublimation-recondensation growth of titanium nitride crystal with N/Ti ratio of 0.99 on tungsten substrate is reported. The growth rate dependence on temperature and pressure was determined, and the calculated activation energy is 775.8 29.8kJ/mol. The lateral and vertical growth rates changed with the time of growth and the fraction of the tungsten substrate surface covered. The orientation relationship of TiN (001) || W (001) with TiN [100] || W [110], a 45o angle between TiN [100] and W [100], occurs not only for TiN crystals deposited on W (001) textured tungsten but also for TiN crystals deposited on randomly orientated tungsten. This study demonstrates that this preferred orientational relationship minimizes the lattice mismatch between the TiN and tungsten.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Temperature Materials Lab. (HTML); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Shared Research Equipment Collaborative Research Center
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 969658
- Journal Information:
- Journal of Materials Science: Materials in Electronics, Vol. 21, Issue 1
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low temperature, fast deposition of metallic titanium nitride films using plasma activated reactive evaporation
Fiber textures of titanium nitride and hafnium nitride thin films deposited by off-normal incidence magnetron sputtering