Origin of surface potential change during ferroelectric switching in epitaxial PbTiO{sub 3} thin films studied by scanning force microscopy.

Journal Article · Thu Jan 01 00:00:00 EST 2009 · Appl. Phys. Lett.

DOI:https://doi.org/10.1063/1.3046786· OSTI ID:966682

Kim, Y; Bae, C; Ryu, K; Ko, H; Kim, Y K; Hong, S; Shin, H

We investigated the surface potential of the ferroelectric domains of the epitaxial PbTiO{sub 3} (PTO) films using both Kelvin probe and piezoresponse force microscopy. The surface potential changes as a function of applied biases suggested that the amount and sign of surface potentials depend on the correlation between polarization and screen charges. It also suggested that the trapped negative charges exist on the as-deposited PTO surfaces. Injected charges and their resultant surface potentials are investigated by grounded tip scans. The results unveiled the origin of surface potential changes during ferroelectric switching in the epitaxial PTO films.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC); Samsung Electronics
• DOE Contract Number: DE-AC02-06CH11357
• OSTI ID: 966682
• Report Number(s): ANL/MSD/JA-65470; APPLAB; TRN: US200921%%537
• Journal Information: Appl. Phys. Lett., Vol. 94, Issue 2009; ISSN 0003-6951
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
LEAD OXIDES
TITANIUM OXIDES
POLARIZATION
SURFACE POTENTIAL
THIN FILMS
EPITAXY
FERROELECTRIC MATERIALS