Microstructure and Dielectric Response of SrTiO3/NdGaO3 Interdigitated Capacitors
Epitaxial strontium titanate (SrTiO3 or STO) thin films were prepared by an off-axis pulsed laser deposition technique on neodymium gallate (NdGaO3 or NGO) substrates held at temperature of 820 C. This technique allows different film growth rates in a deposition. Coplanar capacitors were fabricated and dielectric responses were measured at 1 MHz and at 2 GHz, and from 300 K to 4 K. The electric field tunability of the dielectric constant and loss tangent were taken with a range of electric field. The structure and morphology of the films were analyzed using high-resolution X-ray diffractometry and atomic force microscopy, respectively. The results showed that the films are crystalline with (1 0 0) orientation and the grains are columnar. Increased in-plane grain size and reduced surface to volume ratio were found to play a major role in improved performance of the film coplanar capacitors. The film with the growth rate of approximate 40 Angstroms /min showed the highest change in the dielectric constant with an electric field of 4 V/{mu}m. The film also showed the largest in-plane grain size of about 3000 Angstroms .
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 960069
- Report Number(s):
- BNL-83055-2009-JA; TRN: US1005896
- Journal Information:
- Microelectronic Engineering, Vol. 85
- Country of Publication:
- United States
- Language:
- English
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