Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells
Abstract
The structural and optical properties of GaSbN single quantum wells grown on GaSb substrates by solid source molecular beam epitaxy have been investigated for N concentrations up to 1.5%. The presence of well resolved and pronounced Pendellosung fringes, dynamical diffraction rods seen in the corresponding reciprocal space map, and triple axis full width at half maximum of 10-11 arcsec of the substrate and epilayer peak indicates epilayers of excellent quality with smooth interfaces. Low temperature photoluminescence (PL) exhibited sharp and discrete N related PL line features below the GaSb band edge. Their dependence on N concentration as well as measurement temperature and excitation intensity of the PL strongly suggests that these lines correspond to highly localized N pair/cluster states. No significant effect of in-situ annealing in Sb ambient on the PL features was observed, while ex-situ annealing in N ambient led to the annihilation of these features.
- Authors:
-
- North Carolina A&T State University
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 958775
- DOE Contract Number:
- DE-AC05-00OR22725
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 101; Journal Issue: 11; Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ANNEALING; ANNIHILATION; DIFFRACTION; EXCITATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; SUBSTRATES
Citation Formats
Iyer, Prof Shanthi. Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells. United States: N. p., 2007.
Web. doi:10.1063/1.2734081.
Iyer, Prof Shanthi. Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells. United States. https://doi.org/10.1063/1.2734081
Iyer, Prof Shanthi. 2007.
"Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells". United States. https://doi.org/10.1063/1.2734081.
@article{osti_958775,
title = {Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells},
author = {Iyer, Prof Shanthi},
abstractNote = {The structural and optical properties of GaSbN single quantum wells grown on GaSb substrates by solid source molecular beam epitaxy have been investigated for N concentrations up to 1.5%. The presence of well resolved and pronounced Pendellosung fringes, dynamical diffraction rods seen in the corresponding reciprocal space map, and triple axis full width at half maximum of 10-11 arcsec of the substrate and epilayer peak indicates epilayers of excellent quality with smooth interfaces. Low temperature photoluminescence (PL) exhibited sharp and discrete N related PL line features below the GaSb band edge. Their dependence on N concentration as well as measurement temperature and excitation intensity of the PL strongly suggests that these lines correspond to highly localized N pair/cluster states. No significant effect of in-situ annealing in Sb ambient on the PL features was observed, while ex-situ annealing in N ambient led to the annihilation of these features.},
doi = {10.1063/1.2734081},
url = {https://www.osti.gov/biblio/958775},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 101,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}