Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs.

Journal Article · Sun Jun 01 00:00:00 EDT 2003 · Proposed for publication in Physical Review B.

OSTI ID:946967

Simmons, Jerry Alvon; Noh, Hwayong ^[1]; Lilly, Michael Patrick; Tsui, Daniel Chee ^[1]; West, Ken W ^[2]; Pfeiffer, Loren N ^[2]

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1. Princeton University, Princeton, NJ
2. Bell Labs, Lucent Technologies, Murray Hill, NJ

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e{sup 2}/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 946967
• Report Number(s): SAND2003-2315J; TRN: US0901297
• Journal Information: Proposed for publication in Physical Review B., Journal Name: Proposed for publication in Physical Review B.
• Country of Publication: United States
• Language: English

Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
CRYSTALLIZATION
STRONG INTERACTIONS
TEMPERATURE DEPENDENCE
TRANSPORT