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Title: Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2 The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.
Authors: ; ; ; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:945531
Report Number(s):LLNL-CONF-404753
TRN: US200903%%624
DOE Contract Number:W-7405-ENG-48
Resource Type:Conference
Data Type:
Resource Relation:Conference: Presented at: Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2, IEEE PhotonicsGlobal@Singapore 2008, Singapore, Dec 08 - Dec 11, 2008
Research Org:Lawrence Livermore National Laboratory (LLNL), Livermore, CA
Sponsoring Org:USDOE
Country of Publication:United States
Language:English
Subject: 36 MATERIALS SCIENCE; 42 ENGINEERING; ANNEALING; DIFFUSION; PHOTOLUMINESCENCE; QUANTUM WELLS; SILICA