Effect of Oxygen Contamination on the Electronic Properties of Hot-Wire CVD Amorphous Silicon Germanium Alloys
A series of four a Si,Ge:H alloy samples with Ge fractions near 30 at.% were deposited by hot-wire CVD (HWCVD) using a Ta filament maintained at 1800 C. During film growth, the level of oxygen contamination was varied from less than 10{sup 19} cm{sup -3} to roughly 5 x 10{sup 20} cm{sup -3} using a controlled air-leak. The electronic properties of these films were then characterized using transient photocapacitance (TPC) and transient photocurrent (TPI) spectroscopy, as well as the drive-level capacitance profiling (DLCP) techniques. We observed an unexpected systematic improvement of the electronic properties of these HWCVD a Si,Ge:H with increasing oxygen impurity level, which was reflected by a decrease in the deduced Urbach energies. Comparing these with films co-deposited on stainless-steel versus p+ c-Si substrates, we found significantly better electronic properties in the latter case. Comparisons of the TPC and TPI spectra indicated a very high level of hole collection, consistent with these narrow bandtail distributions.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 944484
- Resource Relation:
- Conference: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology: Proceedings of the Materials Research Society Symposium, 18-21 April 2006, San Francisco, California; Materials Research Society Symposium Proceedings, Vol. 910; Related Information: Paper no. 0910-A02-05
- Country of Publication:
- United States
- Language:
- English
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