Structure of a passivated Ge surface prepared from aqueous solution.
The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH{sub 4}){sub 2}S solutions of various concentrations at 80{sup o}C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeS{sub x} layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); National Science Foundation (NSF); OGA
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 943047
- Report Number(s):
- ANL/MSD/JA-37034; SUSCAS; TRN: US201002%%438
- Journal Information:
- Surf. Sci., Vol. 462, Issue 1-3 ; Aug 10, 2000; ISSN 0039-6028
- Country of Publication:
- United States
- Language:
- ENGLISH
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