Ion implantation in Al{sub x}Ga{sub 1-x}As : damage structures and amorphization mechanisms.

Journal Article · Wed Jul 01 00:00:00 EDT 1998 · IEEE J. Sel. Top. Quantum Electron.

DOI:https://doi.org/10.1109/2944.720470· OSTI ID:942762

Lagow, B W; Turkot, B A; Robertson, I M; Coleman, J J; Roh, S D; Forbes, D V; Rehn, L E; Baldo, P M

We review previous research on ion implantation in Al{sub x}Ga{sub 1-x}As-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of the experimental observations, the most consistent description is one where amorphization occurs by a combination of point-defect buildup and direct impact amorphization mechanisms.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC); National Science Foundation (NSF)
• DOE Contract Number: DE-AC02-06CH11357
• OSTI ID: 942762
• Report Number(s): ANL/MSD/JA-34351; TRN: US200922%%660
• Journal Information: IEEE J. Sel. Top. Quantum Electron., Vol. 4, Issue 4 ; Jul./Aug. 1998; ISSN 1077-260X
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
AMORPHOUS STATE
DAMAGE
GALLIUM NITRIDES
ION IMPLANTATION
POINT DEFECTS