Fabrication of antiferroelectric PLZT films on metal foils.
Fabrication of high-dielectric-strength antiferroelectric (AFE) films on metallic foils is technically important for advanced power electronics. To that end, we have deposited crack-free Pb{sub 0.92}La{sub 0.08}Zr{sub 0.95}Ti{sub 0.05}O{sub 3} (PLZT 8/95/5) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, a conductive buffer layer of lanthanum nickel oxide (LNO) was coated by chemical solution deposition on the nickel foil before the deposition of PLZT. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be processed in air. With the PLZT 8/95/5 deposited on LNO-buffered Ni foils, we observed field- and thermal-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, E{sub AF} = 225 kV/cm, and the reverse phase transition field, E{sub FA} = 190 kV/cm, were measured at room temperature on a {approx}1.15 {micro}m-thick PLZT 8/95/5 film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE states were {approx}600 and {approx}730, respectively, with dielectric loss {approx}0.04 at room temperature. The Curie temperature was {approx}210 C. The thermal-induced transition of AFE-to-FE phase occurred at {approx}175 C. Breakdown field strength of 1.2 MV/cm was measured at room temperature.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- EE
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 942105
- Report Number(s):
- ANL/ES/JA-61517; MRBUAC; TRN: US200825%%772
- Journal Information:
- Mater. Res. Bull., Vol. 44, Issue 1 ; Jan. 2009; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- ENGLISH
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