Molecular Sidebands of Refractory Elements for ISOL

Conference · Tue Jan 01 00:00:00 EST 2008

OSTI ID:940339

Kronenberg, Andreas ^[1]; Spejewski, Eugene H. ^[1]; Carter, H Kennon ^[1]; Mervin, Brenden T. ^[1]; Jost, Cara ^[1]; Stracener, Daniel W ^[2]; Lapi, Suzanne ^[3]; Bray, T. H. ^[4]

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1. Oak Ridge Associated Universities (ORAU)
2. ORNL
3. TRIUMF, Canada
4. Auburn University, Auburn, Alabama

The formation of molecular sidebands of refractory elements, such as V, Re, Zr, Mo, Tc, is discussed. The focus is on in situ sideband formation and its advantage for the release process. An atomic 48V beam has been produced in a two step process, forming the oxide in situ, transporting it through the target-ion source as a chloride and destroying the chlorine sideband in the ion source. The sideband formation of Re, Zr, Mo, Tc is discussed.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Holifield Radioactive Ion Beam Facility (HRIBF)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 940339
• Resource Relation: Conference: XVth International Conference on Electromagnetic Isotope Separators and Techniques Related to their Applications, Deauville, France, 20070624, 20070629
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
VANADIUM 48
ATOMIC BEAMS
VANADIUM CHLORIDES
ELECTROMAGNETIC ISOTOPE SEPARATORS
ION SOURCES
VANADIUM OXIDES
RHENIUM
ZIRCONIUM
MOLYBDENUM
TECHNETIUM
isotope separation
radioactive ion beams
radiochemistry
nuclear chemistry
targets
ion sources